- Μηνύματα
- 246
- Reaction score
- 60
Πωλειται ο ολοκληρωμενος του τιτλου, σε αριστη κατασταση με το κουτι του και το remote.
Εξαιρετικες κριτικες εδω : http://www.mimetism.com/home-mimetism.html
Τεχνικα χαρακτηριστικα INTEGRATED AMPLIFIER MIMETISM 15.2:
From a purely technical standpoint, the challenge was to design a circuit that would be simple and yet
uncompromising in terms of musicality and reliability.
Using Surface Mounted with tight tolerance components associated with traditional ones at the most
strategic places enabled to shorten the signal path length.
The amplification uses the highly acclaimed Hitachi Lateral Mosfets 2SK1058 & 2SJ162 complementary
power transistors, in a configuration of two pairs per channel.
The input section uses a cascode differential stage for the best performance. Both the pre-driver and
the driver stages are based on High-Voltage Power Bipolar Transistors used in HF designs. The driver
operates in pure class A. The circuit is fully direct-coupled but for a single ingress capacitor.
Specifications:
Power Output: 2 x 180 watts RMS 8 ohms; 1000 VA power supply/in-4
Harmonic distortion: .0007% @ 0dBr; .070% @-30 dBr
Signal to Noise Ratio: 100dBr
Residual Noise: 20 Hz to 22 kHz 46 uV balanced; 46 uV unbalanced
Input Impedance: 100k (balanced); 50k (unbalanced)
Voltage Gain: 34.4 V (30.7 db) into 8 ohms; 27.1 V (28.7dB) into 4 ohms
Input Sensitivity: 1.0 V rms for 150W into 8 ohms; .9V rms for 150 watts into
4 ohms
Dimensions: 16.2”(W) x 4.3”(D) x 16.9”(H)
Weight: Shipping: 62 lbs.
Τιμη 2300 ευρω
Ακροασεις εννοειται επιβεβλημενες
Εξαιρετικες κριτικες εδω : http://www.mimetism.com/home-mimetism.html
Τεχνικα χαρακτηριστικα INTEGRATED AMPLIFIER MIMETISM 15.2:
From a purely technical standpoint, the challenge was to design a circuit that would be simple and yet
uncompromising in terms of musicality and reliability.
Using Surface Mounted with tight tolerance components associated with traditional ones at the most
strategic places enabled to shorten the signal path length.
The amplification uses the highly acclaimed Hitachi Lateral Mosfets 2SK1058 & 2SJ162 complementary
power transistors, in a configuration of two pairs per channel.
The input section uses a cascode differential stage for the best performance. Both the pre-driver and
the driver stages are based on High-Voltage Power Bipolar Transistors used in HF designs. The driver
operates in pure class A. The circuit is fully direct-coupled but for a single ingress capacitor.
Specifications:
Power Output: 2 x 180 watts RMS 8 ohms; 1000 VA power supply/in-4
Harmonic distortion: .0007% @ 0dBr; .070% @-30 dBr
Signal to Noise Ratio: 100dBr
Residual Noise: 20 Hz to 22 kHz 46 uV balanced; 46 uV unbalanced
Input Impedance: 100k (balanced); 50k (unbalanced)
Voltage Gain: 34.4 V (30.7 db) into 8 ohms; 27.1 V (28.7dB) into 4 ohms
Input Sensitivity: 1.0 V rms for 150W into 8 ohms; .9V rms for 150 watts into
4 ohms
Dimensions: 16.2”(W) x 4.3”(D) x 16.9”(H)
Weight: Shipping: 62 lbs.
Τιμη 2300 ευρω
Ακροασεις εννοειται επιβεβλημενες
