Νέα τεχνολογία ημιαγωγών από την Intel

[RDoherty]

Ως γνωστόν η διαρροή ρεύματος απείλησε να καταστρέψει την Intel πριν 2 χρόνια, σταματώντας την κλιμάκωση των συχνοτήτων λειτουργίας των CPU και μετατρέποντας την σειρά Netburst σε σόμπες πολυτελείας "happy_1" Και επειδή όποιος καεί στον Pentium 4, φυσάει και τον Core 2 :happy_5: η Intel κινητοποιήθηκε και παρουσιάζει μία νέα τεχνολογία ημιαγώγιμων υλικών, με σκοπό να υπερκεράσει τις δυνατότητες της "αντίπαλης" τεχνολογίας Silicon on insulator που έχει ήδη αναπτύξει η AMD σε συνεργασία με την ΙΒΜ.

Η νέα τεχνολογία χρησιμοποιεί Χάφνιο ως μονωτικό στην πύλη των μικροτρανζίστορ και φιλοδοξεί να μηδενίσει τα ρεύματα διαρροής:
http://www.nytimes.com/2007/01/27/t...&en=b5dab5ed9a363262&ei=5094&partner=homepage

 

[ak1s]

Μερικά quotes:

"The implementation of high-k and metal gate materials marks the biggest change in transistor technology since the introduction of polysilicongate MOS transistors in the late 1960s" - Gordon Moore (Intel)

"The Intel 45-nm CMOS technology marks a historic milestone for the semiconductor industry. Similar to the transition from single metal (Al) gate to polysilicon gate that has allowed optimal nFET and pFET design, the introduction of dual metal with high-k-insulator gate-stack opens the path for optimal design of both types of FETs, at insulator thicknesses necessary for continuing device scaling that are impossible to reach with the industry-standard silicon-dioxide-based insulators. Many options of high-k gate-stacks have been the target of intense industry and academic research for many years now, but Intel's demonstration of a manufacturable dual-metal/high-k solution is a remarkable first." - Prof. Dimitri Antoniadis (MIT)

"It is a huge break through to replace more than three decade's long successful polysilicon gate technology with a new high-k+metal gate technology. Though the combination of high-k dielectrics and metal gate electrode for advanced CMOS has been extensively studied by many researchers around the world as the ideal MOS gate structure, the technical hurdle to bring the technology to manufacturing floor has been believed still too high for the 45nm node. As a researcher in this field, I am pleasantly surprised by the announcement and would like to congratulate Intel researchers for their success that Intel has demonstrated 45nm microprocessors with their high-k and metal gate technology. Even though specific metal and high-k material have not been disclosed at this moment, this is a revolutionary step toward the world of sub-50nm CMOS integrated circuits, as this new technology will drastically improve transistor performance in all fronts of electrical specifications, resulting in significant improvement of IC performance." - Yoshio Nishi (Stanford)

 

[RDoherty]

Περισσότερα για τους Penryn:
http://www.anandtech.com/cpuchipsets/showdoc.aspx?i=2915&p=3
και ένα (αδρό αλλά ενδιαφέρον) γράφημα για την ωρίμανση της φωτολιθογραφίας: